 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1061 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) *High Power Dissipation *Complement to Type 2SC2485 APPLICATIONS *Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature -10 A PC 70 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= -30mA ; IB= 0 IC= -4A; IB= -0.4A IC= -4A; VCE= -5V VCB= -100V; IE= 0 VEB= -3V; IC= 0 IC= -0.2A; VCE= -5V IC= -1A; VCE= -5V IC= -4A; VCE= -5V IC= -0.5A; VCE= -5V 20 40 20 MIN -100 2SA1061 TYP. MAX UNIT V -2.0 -1.8 -50 -50 V V A A 220 20 MHz hFE-2 Classifications R 40-80 Q 60-120 P 100-200 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SA1061
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |